Efficient and widely tunable mid-infrared sources using GaAs and AlGaAs integrated platforms for second-order frequency conversion.

Integrated coherent mid-infrared (mid-IR) sources are crucial for spectroscopy and quantum frequency conversion (QFC) to facilitate scalable fiber-based application of single photons. Direct mid-IR emission with broad tunability poses fundamental challenges from the gain media and mirror components. This paper presents a characterization of a second-order nonlinear platform.

Open-source toolbox for photographic characterization of optical propagation.

An alternative method for characterizing optical propagation in waveguide structures based on scattered light imaging is presented and demonstrated for the spectral range of 450-980 nm. Propagation losses as low as 1.40 dB/cm are demonstrated in alumina spiral waveguides.

Continuous-wave second-harmonic generation in the far-UVC pumped by a blue laser diode.

Far-UVC light in the wavelength range of 200-230 nm has attracted renewed interest because of its safety for human exposure and effectiveness in inactivating pathogens. Here we present a compact solid-state far-UVC laser source based on second-harmonic generation (SHG) using a low-cost commercially-available blue laser diode pump. Leveraging the high intensity of light in a nanophotonic waveguide and heterogeneous integration, our approach achieves Cherenkov phase-matching across a bonded interface consisting of a silicon nitride (SiN) waveguide and a beta barium borate (BBO) nonlinear crystal.

Frequency noise measurements using coherent self-heterodyne detection.

We demonstrate a refined way to extract the frequency noise (FN) spectrum of lasers by tailoring the delay in a conventional delayed self-heterodyne setup to sub-coherence lengths. The method achieves direct proportionality between electrical spectrum analyzer traces and the FN spectrum, which provide the intrinsic linewidth of the lasers. This proposed method is validated by comparing the FN spectrum with that obtained from a commercial frequency noise analyzer.

Intra-cavity coherent combining of DBR lasers on an InP generic foundry platform.

We report an intra-cavity coherent combining of two distributed Bragg reflector (DBR) lasers with a combining efficiency of ∼84% on an InP generic foundry platform. The on-chip power of the intra-cavity combined DBR lasers is ∼9.5 mW at the injection current of 42 mA in both gain sections simultaneously.

Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits.

We report a method for integrating GaAs waveguide circuits containing self-assembled quantum dots on a Si/SiO wafer, using die-to-wafer bonding. The large refractive-index contrast between GaAs and SiO enables fabricating single-mode waveguides without compromising the photon-emitter coupling. Anti-bunched emission from individual quantum dots is observed, along with a waveguide propagation loss <7 dB/mm, which is comparable with the performance of suspended GaAs circuits.

Ultralow-linewidth ring laser using hybrid integration and generic foundry platforms.

Two photonic integrated circuits (PICs) are coupled to form a hybridly integrated semiconductor ring laser in the telecom C band with an intrinsic linewidth of (158±21) Hz. This is, to the best of our knowledge, the first time an InP active-passive platform is used in conjunction with an integrated low-loss resonator to obtain a narrow-linewidth laser implemented using generic foundry platforms. The presented results pave the way for a hybrid integrated platform for microwave photonics (MWP), as the demonstrated device includes multiple active-passive components, and its narrow optical linewidth can potentially be translated to a narrow-linewidth microwave signal.

A 10-kHz intrinsic linewidth coupled extended-cavity DBR laser monolithically integrated on an InP platform.

We report a monolithically integrated coupled extended-cavity distributed Bragg reflector laser with, to our knowledge, the lowest reported intrinsic linewidth of ∼10 kHz, which is extracted from a corresponding frequency-noise level of ∼3200 Hz/Hz, realized on an InP generic foundry platform. Using the delayed self-heterodyne method, the experimentally measured linewidth was 45 kHz. The laser has an on-chip optical output power of 18 mW around 1550 nm at an injection current of 95 mA.

Efficient second harmonic generation in nanophotonic GaAs-on-insulator waveguides.

Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense nonlinear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in GaAs-on-insulator waveguides with unprecedented efficiency of 40 W for a single-pass device.

Chip-based soliton microcomb module using a hybrid semiconductor laser.

Photonic chip-based soliton microcombs have shown rapid progress and have already been used in many system-level applications. There has been substantial progress in realizing soliton microcombs that rely on compact laser sources, culminating in devices that only utilize a semiconductor gain chip or a self-injection-locked laser diode as the pump source. However, generating single solitons with electronically detectable repetition rates from a compact laser module has remained challenging.

An optical-frequency synthesizer using integrated photonics.

Optical-frequency synthesizers, which generate frequency-stable light from a single microwave-frequency reference, are revolutionizing ultrafast science and metrology, but their size, power requirement and cost need to be reduced if they are to be more widely used. Integrated-photonics microchips can be used in high-coherence applications, such as data transmission , highly optimized physical sensors and harnessing quantum states , to lower cost and increase efficiency and portability. Here we describe a method for synthesizing the absolute frequency of a lightwave signal, using integrated photonics to create a phase-coherent microwave-to-optical link.

Silicon arrayed waveguide gratings at 2.0-μm wavelength characterized with an on-chip resonator.

Low-loss arrayed waveguide gratings (AWGs) are demonstrated at a 2.0-μm wavelength. These devices promote rapidly developing photonic applications, supported by the recent development of mid-infrared lasers integrated on silicon (Si).

Low-loss demonstration and refined characterization of silicon arrayed waveguide gratings in the near-infrared.

A resonator is characterized with two cascaded arrayed waveguide gratings (AWGs) in a ring formation. From this structure, the on-chip transmittance of a single AWG is extracted, independent of coupling efficiency. It provides improved measurement accuracy, which is essential for developing AWGs with extremely low loss.

On-chip wavelength locking for photonic switches.

We present an on-chip wavelength reference with a partial drop ring resonator and germanium photodetector. This approach can be used in ring-resonator-based wavelength-selective switches where absolute wavelength alignment is required. We use the temperature dependence of heater resistance as a temperature sensor.

Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (SiN) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the SiN and the LN-SiN waveguides.

High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband.

We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of gain mirror structure, maximum output power values reach 7.1 W with intracavity diamond gain mirrors and 5.

Transverse mode discrimination in long-wavelength wafer-fused vertical-cavity surface-emitting lasers by intra-cavity patterning.

Transverse mode discrimination is demonstrated in long-wavelength wafer-fused vertical-cavity surface-emitting lasers using ring-shaped air gap patterns at the fused interface between the cavity and the top distributed Bragg reflector. A significant number of devices with varying pattern dimensions was investigated by on-wafer mapping, allowing in particular the identification of a design that reproducibly increases the maximal single-mode emitted power by about 30 %. Numerical simulations support these observations and allow specifying optimized ring dimensions for which higher-order transverse modes are localized out of the optical aperture.