Thermal characterization of morphologically diverse copper phthalocyanine thin layers by scanning thermal microscopy.

Morphologically diverse copper phthalocyanine (CuPc) thin layers were thermally characterized by scanning thermal microscopy (SThM). The organic layers with thicknesses below 1 µm were deposited by physical vapor deposition in a high vacuum on the N-BK 7 glass substrates. Four set of samples were fabricated and studied.

Size effect of hybrid carbon nanofillers on the synergetic enhancement of the properties of HDPE-based nanocomposites.

High-density polyethylene (HDPE)-based hybrid nanocomposites containing graphene nanoplatelets (GnPs) and multiwall carbon nanotubes (MWCNTs) were fabricated using melt mixing followed by compression molding. The influences of size and weight ratio of both carbon-based nanofillers on the electrical, thermal, and mechanical properties of hybrid nanocomposites were evaluated. This study proves that the size and weight ratio of carbon-based nanofillers play a critical role in determining these properties.

Size effects of graphene nanoplatelets on the properties of high-density polyethylene nanocomposites: morphological, thermal, electrical, and mechanical characterization.

High-density polyethylene (HDPE)-based nanocomposites incorporating three different types of graphene nanoplatelets (GnPs) were fabricated to investigate the size effects of GnPs in terms of both lateral size and thickness on the morphological, thermal, electrical, and mechanical properties. The results show that the inclusion of GnPs enhance the thermal, electrical, and mechanical properties of HDPE-based nanocomposites regardless of GnP size. Nevertheless, the most significant enhancement of the thermal and electrical conductivities and the lowest electrical percolation threshold were achieved with GnPs of a larger lateral size.

Thermophysical characterisation of VO thin films hysteresis and its application in thermal rectification.

Hysteresis loops exhibited by the thermophysical properties of VO thin films deposited on either a sapphire or silicon substrate have been experimentally measured using a high frequency photothermal radiometry technique. This is achieved by directly measuring the thermal diffusivity and thermal effusivity of the VO films during their heating and cooling across their phase transitions, along with the film-substrate interface thermal boundary resistance. These thermal properties are then used to determine the thermal conductivity and volumetric heat capacity of the VO films.

Electronic contribution in heat transfer at metal-semiconductor and metal silicide-semiconductor interfaces.

This work presents a direct measurement of the Kapitza thermal boundary resistance R, between platinum-silicon and platinum silicide-silicon interfaces. Experimental measurements were made using a frequency domain photothermal radiometry set up at room temperature. The studied samples consist of ≈50 nm of platinum and ≈110 nm of platinum silicide on silicon substrates with different doping levels.