Nanosecond protonic programmable resistors for analog deep learning.

Nanoscale ionic programmable resistors for analog deep learning are 1000 times smaller than biological cells, but it is not yet clear how much faster they can be relative to neurons and synapses. Scaling analyses of ionic transport and charge-transfer reaction rates point to operation in the nonlinear regime, where extreme electric fields are present within the solid electrolyte and its interfaces. In this work, we generated silicon-compatible nanoscale protonic programmable resistors with highly desirable characteristics under extreme electric fields.

CMOS-Compatible Protonic Programmable Resistor Based on Phosphosilicate Glass Electrolyte for Analog Deep Learning.

Ion intercalation based programmable resistors have emerged as a potential next-generation technology for analog deep-learning applications. Proton, being the smallest ion, is a very promising candidate to enable devices with high modulation speed, low energy consumption, and enhanced endurance. In this work, we report on the first back-end CMOS-compatible nonvolatile protonic programmable resistor enabled by the integration of phosphosilicate glass (PSG) as the proton solid electrolyte layer.

Probing the role of thermal vibrational disorder in the SPT of VO[Formula: see text] by Raman spectroscopy.

Phase competition in transition metal oxides has attracted remarkable interest for fundamental aspects and technological applications. Here, we report a concurrent study of the phase transitions in undoped and Cr-doped VO[Formula: see text] thin films. The structural, morphological and electrical properties of our films are examined and the microstructural effect on the metal-insulator transition (MIT) are highlighted.

Protonic solid-state electrochemical synapse for physical neural networks.

Physical neural networks made of analog resistive switching processors are promising platforms for analog computing. State-of-the-art resistive switches rely on either conductive filament formation or phase change. These processes suffer from poor reproducibility or high energy consumption, respectively.

How optical excitation controls the structure and properties of vanadium dioxide.

We combine ultrafast electron diffraction and time-resolved terahertz spectroscopy measurements to link structure and electronic transport properties during the photoinduced insulator-metal transitions in vanadium dioxide. We determine the structure of the metastable monoclinic metal phase, which exhibits antiferroelectric charge order arising from a thermally activated, orbital-selective phase transition in the electron system. The relative contribution of the photoinduced monoclinic and rutile metals to the time-dependent and pump-fluence-dependent multiphase character of the film is established, as is the respective impact of these two distinct phase transitions on the observed changes in terahertz conductivity.

Natural and induced growth of VO (M) on VO (B) ultrathin films.

This work examines the synthesis of single phase VO (B) thin films on LaAlO (100) substrates, and the naturally-occurring and induced subsequent growth of VO (M) phase on VO (B) films. First, the thickness (t) dependence of structural, morphological and electrical properties of VO films is investigated, evidencing that the growth of VO (B) phase is progressively replaced by that of VO (M) when t > ~11 nm. This change originates from the relaxation of the substrate-induced strain in the VO (B) films, as corroborated by the simultaneous increase of surface roughness and decrease of the c-axis lattice parameter towards that of bulk VO (B) for such films, yielding a complex mixed-phase structure composed of VO (B)/VO (M) phases, accompanied by the emergence of the VO (M) insulator-to-metal phase transition.