Transport properties of indium-alloyed and indium telluride nanostructured bismuth telluride.

Nanostructured thermoelectric materials ideally reduce lattice thermal conductivity without harming the electrical properties. Thus, to truly improve the thermoelectric performance, the quality factor, which is proportional to the weighted mobility divided by the lattice thermal conductivity of the material, must be improved. Precipitates of InTe form in the state-of-the-art BiTe with crystallographic alignment to the BiTe structure.

Stabilizing the optimal carrier concentration for high thermoelectric efficiency.

The band structure of PbTe can be manipulated by alloying with MgTe to control the band degeneracy. This is used to stabilize the optimal carrier concentration, making it less temperature dependent, demonstrating a new strategy to improve overall thermoelectric efficiency over a broad temperature range.