Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly.

Extending the resolution and spatial proximity of lithographic patterning below critical dimensions of 20 nm remains a key challenge with very-large-scale integration, especially if the persistent scaling of silicon electronic devices is sustained. One approach, which relies upon the directed self-assembly of block copolymers by chemical-epitaxy, is capable of achieving high density 1 : 1 patterning with critical dimensions approaching 5 nm. Herein, we outline an integration-favourable strategy for fabricating high areal density arrays of aligned silicon nanowires by directed self-assembly of a PS-b-PMMA block copolymer nanopatterns with a L(0) (pitch) of 42 nm, on chemically pre-patterned surfaces.

Simultaneous scanning tunneling microscopy and stress measurements to elucidate the origins of surface forces.

We have developed a new combined measurement system to investigate the underlying origins of forces on solid state surfaces from the viewpoint of atomic surface morphology. This system consists of two main parts: the measurements of force based on displacements and detailed atomic resolution observations of the surface morphology. The former involves a large sample cantilever and a capacitive detection method that provide sufficient resolution to detect changes of a few meV/atom or pN/atom at surfaces.