Stacking-dependent and electric field-driven electronic properties and band alignment transitions in γ-GeSe/GaSSe heterostructures: a first-principles study.

In this work, we present a comprehensive investigation into the electronic properties and contact behavior of γ-GeSe/GaSSe heterostructures using first-principles calculations. Two stacking configurations, γ-GeSe/SGaSe and γ-GeSe/SeGaS, are explored, both exhibiting semiconducting behavior with type-II and type-I band alignments, respectively. Notably, our results show that the band alignment transition in these heterostructures can occur spontaneously by simply altering the stacking configuration, eliminating the need for external factors.

Computational investigations of the metal/semiconductor NbS/boron phosphide van der Waals heterostructure: effects of an electric field.

In this work, we design computationally the metal-semiconductor NbS/BP heterostructure and investigate its atomic structure, electronic properties and contact barrier using first-principles prediction. Our results show that the M-S NbS/BP heterostructure is energetically stable and is characterized by weak vdW interactions. Interestingly, we find that the combination of the metallic NbS and semiconducting BP layers leads to the formation of a M-S contact.

Invasion Pattern of in the Native Range of in Vietnam Revealed by Biogeographic and Population Genetic Analysis.

Since its introduction to Asia, has coexisted with the native species and has been reported to transmit several infectious diseases. However, the development of efficient disease prevention and vector control is hindered by the relatively poor understanding of the biogeography and the genetic diversity of in the region. This study aimed to determine the invasion patterns of by evaluating the distribution and abundance of and in different climatic regions (northern temperate and southern tropical regions) and habitats (domestic, peri-domestic, and natural).