A novel sonoelectrochemical approach for preparing of ZnO nanoparticles.

A novel, rapid, and facile method for one-step sonoelectrochemical synthesis of zinc oxide nanoparticles (UEZ) was introduced in this study. The optimum operating parameters have been selected at a voltage of 7.5 V, KCl concentration of 0.

A simple and efficient ultrasonic-assisted electrochemical approach for scalable production of nitrogen-doped TiOnanocrystals.

In this study, we report a facile and effective approach for large-scale production of nitrogen-doped TiOnanocrystals (UNTs) by a combination of ultrasonic irradiation and electrochemistry at room temperature using NHNOelectrolyte as the nitrogen source. The as-prepared UNTs were then characterized by x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, and UV-visible diffuse reflectance spectroscopy. The results indicated that the nitrogen content of UNTs reached 9.

WO-ZnO and CuO-ZnO nanocomposites as highly efficient photoanodes under visible light illumination.

We prepared ZnO nanocomposites with WO or CuO nanostructures to improve the photocatalytic performance of ZnO nanostructures. Characterization of the nanocomposites using scanning electron microscopy, x-ray diffraction, UV-vis spectrometry and photoluminescence revealed the morphologies and wide light absorption range of the materials. The highest current densities of WO/ZnO and CuO/ZnO nanocomposites were 1.

Light Absorption and Luminescence Quenching Properties of Hybrid Bulk Heterojunction Materials Based on the Blend Conducting Polymers.

We have investigated the enhancement absorption light and luminescence quenching properties of the hybrid bulk heterojunction systems which were fabricated using poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV); poly(3-hexylthiophene) (P3HT); fullerene derivative 1-(3-methoxycarbonyl) propyl-1-phenyl-[6,6] C61 (PCBM) and TiO₂ nanocrystals. The optimized material showed a broad absorption in the region of 350 to 670 nm and the luminescence quenching higher 85%. The obtained results provide further insight into photophysics of the heterojunction system and device performance improvement by using this system as an active layer.

Application of solution-processed metal oxide layers as charge transport layers for CdSe/ZnS quantum-dot LEDs.

We fabricated and characterized quantum-dot light emitting devices (QLEDs) that consisted of a CdSe/ZnS quantum-dot (QD) emitting layer, a hole-transporting nickel oxide (NiO) layer and/or an electron-transporting zinc oxide (ZnO) layer. Both the p-type NiO and n-type ZnO layers were formed by using sol-gel processes. All the fabricated CdSe/ZnS QLEDs showed similar electroluminescence spectra that originated from the green CdSe/ZnS QDs.