Prevalence of common autosomal recessive mutation carriers in women in the Southern Vietnam following the application of expanded carrier screening.

The common autosomal recessive (AR) mutation carrier is still unknown in Vietnam. This study aims to identify the most common AR gene mutation carriers in women of reproductive age to build a Vietnamese-specific carrier screening panel for AR and X-linked disorders in the preconception and prenatal healthcare program. A cross-sectional study was conducted at University Medical Center-Branch 2 in Ho Chi Minh City from December 1st, 2020, to June 30th, 2023.

Prenatal diagnosis of non-typical Chiari malformation type I associated with de novo Nuclear Factor I A gene mutation: a case report.

Background: Chiari malformation is one of the most common Central nervous system (CNS) abnormalities that can be detected in routine fetal scanning. Chiari malformation type I (CMI) is a congenital defect characterized by a displacement of the cerebellar tonsils through the foramen magnum. The etiology of CMI has not been well established and suggested having multifactorial contributions, especially genetic deletion.

Fabrication and Evaluation of N-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods.

We have demonstrated the enhancement-mode n-channel gallium nitride (GaN) metal-oxide field-effect transistors (MOSFETs) on homoepitaxial GaN substrates using the selective area regrowth and ion implantation techniques. Both types of MOSFETs perform normally off operations. The GaN-MOSFETs fabricated using the regrowth method perform superior characteristics over the other relative devices fabricated using the ion implantation technique.

Synthesis and Evaluation of Thick Films of Electrochemically Deposited Bi₂Te₃ and Sb₂Te₃ Thermoelectric Materials.

This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth telluride (Bi₂Te₃) and P-type antimony telluride (Sb₂Te₃), are performed and compared. As a result, highly oriented Bi₂Te₃ and Sb₂Te₃ thick films with a bulk-like structure are successfully synthesized with high Seebeck coefficients and low electrical resistivities.