Publications by authors named "Nesrine Ben Romdhane"

Article Synopsis
  • Spin-transfer torque magnetic memory (STT-MRAM) is gaining attention for its advantages such as non-volatility, fast read/write speeds, and high endurance, making it a promising technology.
  • This research explores STT-MRAM's potential as a stochastic memristive device that can mimic synaptic functions, by analyzing its behavior under different programming current regimes (low, intermediate, and high).
  • Simulations indicate that the intermediate current regime is optimal as it minimizes energy consumption while maintaining robustness against variations, suggesting new opportunities for integrating STT-MTJs in efficient cognitive systems.
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