Electronic Transport in Bilayer MoS Encapsulated in HfO.

The exact nature of the interface between a two-dimensional crystal and its environment can have a significant impact on the electronic transport within the crystal, and can place fundamental limitations on transistor performance and long-term functionality. Two-dimensional transition-metal dichalcogenides are a new class of transistor channel material with electronic properties that can be tailored through dielectric engineering of the material/environmental interface. Here, we report electrical transport measurements carried out in the insulating regime of bilayer molybdenum disulfide, which has been encapsulated within a high-κ hafnium oxide dielectric.