Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide.

Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques.

Functionalized Reduced Graphene Oxide Thin Films for Ultrahigh CO Gas Sensing Performance at Room Temperature.

The demand for carbon dioxide (CO) gas detection is increasing nowadays. However, its fast detection at room temperature (RT) is a major challenge. Graphene is found to be the most promising sensing material for RT detection, owing to its high surface area and electrical conductivity.

A Review on Graphene-Based Light Emitting Functional Devices.

In recent years, the field of nanophotonics has progressively developed. However, constant demand for the development of new light source still exists at the nanometric scale. Light emissions from graphene-based active materials can provide a leading platform for the development of two dimensional (2-D), flexible, thin, and robust light-emitting sources.

Boron-Doped Reduced Graphene Oxide with Tunable Bandgap and Enhanced Surface Plasmon Resonance.

Graphene and its hybrids are being employed as potential materials in light-sensing devices due to their high optical and electronic properties. However, the absence of a bandgap in graphene limits the realization of devices with high performance. In this work, a boron-doped reduced graphene oxide (B-rGO) is proposed to overcome the above problems.

Dynamic Absorption Enhancement and Equivalent Resonant Circuit Modeling of Tunable Graphene-Metal Hybrid Antenna.

Plasmonic antennas are attractive optical components of the optoelectronic devices, operating in the far-infrared regime for sensing and imaging applications. However, low optical absorption hinders its potential applications, and their performance is limited due to fixed resonance frequency. In this article, a novel gate tunable graphene-metal hybrid plasmonic antenna with stacking configuration is proposed and investigated to achieve tunable performance over a broad range of frequencies with enhanced absorption characteristics.

A Review on the Development of Tunable Graphene Nanoantennas for Terahertz Optoelectronic and Plasmonic Applications.

Exceptional advancement has been made in the development of graphene optical nanoantennas. They are incorporated with optoelectronic devices for plasmonics application and have been an active research area across the globe. The interest in graphene plasmonic devices is driven by the different applications they have empowered, such as ultrafast nanodevices, photodetection, energy harvesting, biosensing, biomedical imaging and high-speed terahertz communications.

Band Anti-Crossing Model in Dilute-As GaNAs Alloys.

The band structure of the dilute-As GaNAs material is explained by the hybridization of localized As-impurity states with the valance band structure of GaN. Our approach employs the use of Density Functional Theory (DFT) calculated band structures, along with experimental results, to determine the localized As-impurity energy level and coupling parameters in the band anti-crossing (BAC) k ∙ p model for N-rich alloys. This model captures the reduction of bandgap with increasing arsenic incorporation and provides a tool for device-level design with the material within the context of the k ∙ p formalism.

Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides.

Metal-nitrides of hafnium nitride (HfN), zirconium nitride (ZrN) and titanium nitride (TiN) are investigated as plasmonic materials to enhance the internal quantum efficiency of a GaN:Eu red light emitter. Theoretical calculations are performed to evaluate the surface plasmon polariton dispersion relation and Purcell enhancement factor for a single metal-nitride layer on top of the GaN:Eu emitter. Our findings suggest that among the metal-nitrides investigated in this study, TiN is the most promising candidate for use as plasmonic material to increase the internal quantum efficiency in GaN:Eu red light emitters.

Shear-Induced Changes of Electronic Properties in Gallium Nitride.

We show that sliding on the surface of GaN can permanently change the surface band structure, resulting in an increased degree of band bending by more than 0.5 eV. We hypothesize that shear and contact stresses introduce vacancies that cause a spatially variant band bending.

First-Principle Study of the Optical Properties of Dilute-P GaNP Alloys.

An investigation on the optical properties of dilute-P GaNP alloys by First-Principle Density Functional Theory (DFT) methods is presented, for phosphorus (P) content varying from 0% up to 12.5%. Findings on the imaginary and real part of the dielectric function are analyzed and the results are compared with previously reported theoretical works on GaN.

Ultra-Broadband Optical Gain in III-Nitride Digital Alloys.

A novel III-Nitride digital alloy (DA) with ultra-broadband optical gain is proposed. Numerical analysis shows a 50-period InN/GaN DA yields minibands that are densely quantized by numerous confined states. Interband transitions between the conduction and valence minibands create ultra-broadband optical gain spectra with bandwidths up to ~1 μm that can be tuned from the red to infrared.

Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear.

A correction to this article has been published and is linked from the HTML version of this paper. The error has been fixed in the paper.

Investigations of the Optical Properties of GaNAs Alloys by First-Principle.

We present a Density Functional Theory (DFT) analysis of the optical properties of dilute-As GaNAs alloys with arsenic (As) content ranging from 0% up to 12.5%. The real and imaginary parts of the dielectric function are investigated, and the results are compared to experimental and theoretical values for GaN.

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu ion is decomposed in a multiple level system, which includes the carrier transport phenomena across the GaN/GaN:Eu/GaN active region of the device, and the interactions among traps, Eu ions and the GaN host. The identification and analysis of the limiting factors of the IQE are accomplished through the CIE model.

Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes.

A physically intuitive current injection efficiency model for a GaN:Eu quantum well (QW) has been developed to clarify the necessary means to achieve device quantum efficiency higher than the state-of-the-art GaN:Eu system for red light emission. The identification and analysis of limiting factors for high internal quantum efficiencies (IQE) are accomplished through the current injection efficiency model. In addition, the issue of the significantly lower IQE in the electrically-driven GaN:Eu devices in comparison to the optically-pumped GaN:Eu devices is clarified in the framework of this injection efficiency model.

Crystal Orientation Dependence of Gallium Nitride Wear.

We explore how crystallographic order and orientation affect the tribological (friction and wear) performance of gallium nitride (GaN), through experiments and theory. Friction and wear were measured in every direction on the c-plane of GaN through rotary wear experiment. This revealed a strong crystallographic orientation dependence of the sliding properties of GaN; a 60° periodicity of wear rate and friction coefficient was observed.

AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics.

The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultra-thin ( ≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we performed a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- and deep-ultraviolet (UV) applications. Our numerical analysis indicates significant miniband engineering in the AlN/GaN DA by tuning the thicknesses of AlN barriers and GaN wells, so that the effective energy gap can be engineered from ~3.

Wide-field high-speed space-division multiplexing optical coherence tomography using an integrated photonic device.

Space-division multiplexing optical coherence tomography (SDM-OCT) is a recently developed parallel OCT imaging method in order to achieve multi-fold speed improvement. However, the assembly of fiber optics components used in the first prototype system was labor-intensive and susceptible to errors. Here, we demonstrate a high-speed SDM-OCT system using an integrated photonic chip that can be reliably manufactured with high precisions and low per-unit cost.

III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures.

The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are expected to have comparable optoelectronic properties as the conventional III-Nitride alloys. Here we carried out numerical studies on the InGaN DA showing the tunable optoelectronic properties of the III-Nitride DA.

First-Principle Electronic Properties of Dilute-P GaN(1-x)P(x) Alloy for Visible Light Emitters.

A study on the electronic properties of the dilute-P GaN(1-x)P(x)alloy using First-Principle Density Functional Theory (DFT) calculations is presented. Our results indicate a band gap energy coverage from 3.645 eV to 2.

Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters.

The optical gain and spontaneous emission characteristics of low In-content AlInN-delta-GaN quantum wells (QWs) are analyzed for deep ultraviolet (UV) light emitting diodes (LEDs) and lasers. Our analysis shows a large increase in the dominant transverse electric (TE) polarized spontaneous emission rate and optical gain. The remarkable enhancements in TE-polarized optical gain and spontaneous emission characteristics are attributed to the dominant conduction (C)-heavy hole (HH) transitions achieved by the AlInN-delta-GaN QW structure, which could lead to its potential application as the active region material for high performance deep UV emitters.

Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter.

The band structures of dilute-As AlNAs alloys with As composition ranging from 0% up to 12.5% are studied by using First-Principle Density Functional Theory (DFT) calculation. The energy band gap shows remarkable reduction from 6.

Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes.

Light extraction efficiency of thin-film flip-chip InGaN-based light-emitting diodes (LEDs) with a TiO2 microlens arrays was calculated by employing the finite-difference time-domain method. The microlens arrays, formed by embedding hexagonal close-packed TiO2 sphere arrays in a polystyrene (PS) layer, were placed on top of the InGaN LED to serve as an intermediate medium for light extraction. By tuning the thickness of the PS layer, in-coupling and out-coupling efficiencies were optimized to achieve maximum light extraction efficiency.

InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters.

The design of InGaN/dilute-As GaNAs interface quantum well (QW) leads to significant redshift in the transition wavelength with improvement in electron-hole wave function overlap and spontaneous emission rate as compared to that of the conventional In0.2Ga0.8N QW.

Resonant cavity effect optimization of III-nitride thin-film flip-chip light-emitting diodes with microsphere arrays.

Comprehensive studies were carried out to investigate the light extraction efficiency of thin-film flip-chip (TFFC) light-emitting diodes (LEDs) with anatase TiO(2) microsphere arrays by employing the finite-difference time-domain method. The quantum well position and the resonant cavity effect were studied to obtain optimum light extraction for the planar TFFC LED. Further enhancement in light extraction was achieved by depositing microsphere arrays on the TFFC LED.