An artificial synaptic transistor using an α-InSe van der Waals ferroelectric channel for pattern recognition.

Despite being widely investigated for their memristive behavior, ferroelectrics are barely studied as channel materials in field-effect transistor (FET) configurations. In this work, we use multilayer α-InSe to realize a ferroelectric channel semiconductor FET, , FeS-FET, whose gate-triggered and polarization-induced resistive switching is then exploited to mimic an artificial synapse. The FeS-FET exhibits key signatures of a synapse such as excitatory and inhibitory postsynaptic current, potentiation/depression, and paired pulsed facilitation.