Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector.

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W(-1)), photoconductive gain (∼2.

Bandgap engineering of Cd(x)Zn(1-x)Te nanowires.

Bandgap engineering of single-crystalline alloy Cd(x)Zn(1-x)Te (0 ≤ x ≤ 1) nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor-liquid-solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photoluminescence shows highly crystalline alloy nanowires with precise tuning of the bandgap. It is well known that bulk Cd(x)Zn(1-x)Te is popular for construction of radiation detectors and availability of a nanowire form of this material would help to improve detection sensitivity and miniaturization.