Photochemiresistor Sensor Development Based on a Bismuth Vanadate Type Semiconductor for Determination of Chemical Oxygen Demand.

The present paper describes the development of a novel photochemiresistor sensor for the determination of chemical oxygen demand (COD). A chemiresistive device was produced by a thin film of the monoclinic phase of bismuth vanadate deposited on an FTO glass surface. The resistive properties of the photosensor were carried out by electrochemical impedance spectroscopy (EIS).