Unconventional Photovoltaic Effect in a Perovskite-Coated Metal-Insulator-Graphene Photodiode.

The photovoltaic effect offers a simple way for converting light into an electrical signal. Here, we report on the observation of a zero-bias photocurrent in the forward direction of a perovskite-covered metal-insulator-graphene diode (MIG-diode), which is the opposite current direction compared to conventional photovoltaic cells and photodiodes. Photocurrent mapping has been performed to gain insights into the precise position of photocurrent generation, demonstrating that the zero-bias photocurrent is primarily generated at the edges of the active device area.

Inkjet-Printed, High-Performance MoS Transistors and Unipolar Logic Electronics.

Two-dimensional (2D) semiconductor field-effect film transistors combine large carrier mobility with mechanical flexibility and therefore can be ideally suitable for wearable electronics or at the sensor interfaces of smart sensor systems. However, such applications require large-area solution processing as opposed to single-flake devices, where the critical challenge to overcome is the high interflake resistance values. In this report, using a narrow-channel, near-vertical transport device architecture, we have fabricated inkjet-printed sub-20 nm channel electrolyte-gated transistors with predominantly intraflake carrier transport.