Wetting state and mechanical property alteration for the FeSi films using rapid thermal annealing under various temperatures.

The current research demonstrates the modification of the wetting behavior and mechanical features as well as structure and morphology of FeSi films created via facing target sputtering by the rapid thermal annealing (RTA) with the set RTA temperatures () of 200, 400, 600, and 800 °C. Following the RTA process, the crystallinity of FeSi developed under 400 °C or below. At the 600 °C and 800 °C , new crystal orientations emerged for FeSi and then -FeSi, respectively.

Light Detection and Carrier Transportation Mechanism in -Type Si/-Type Nanocrystalline FeSi₂ Heterojunctions Produced via Radio-Frequency Magnetron Sputtering.

In the current research, -type Si/-type nanocrystalline FeSi₂ heterojunctions were fabricated at room temperature with an argon pressure of 2.66×10 Pa by means of the utilization of a radiofrequency magnetron sputtering technique. These heterojunctions were studied for the carrier transportation mechanism and near-infrared (NIR) light detection at various temperatures ranging from 300 K down to 150 K.

Wettability, Surface Morphology and Structural Properties of -FeSi₂ Films Manufactured Through Usage of Radio-Frequency Magnetron Sputtering.

In this research, -FeSi₂ thin films were manufactured onto Si(111) wafer substrates through the usage of radio-frequency magnetron sputtering (RFMS) method at 2.66 × 10 Pa of sputtering pressure. The substrate temperatures were varied at 500 °C, 560 °C, and 600 °C.

Influence of an Annealing Temperature in a Vacuum Atmosphere on the Physical Properties of Indium Tin Oxide Nanorod Films.

In the present study, indium tin oxide (ITO) nanorod films were produced by usage of ion-assisted electron-beam evaporation with a glancing angle deposition technique. The as-produced ITO nanorod films were annealed in the temperature range of 100-500 °C for two hours in a vacuum atmosphere. The as-produced ITO nanorod films exhibited (222) and (611) preferred orientations from the X-ray diffraction pattern.