Nanoelectronic Investigation Reveals the Electrochemical Basis of Electrical Conductivity in Shewanella and Geobacter.

The electrical conductivity measured in Shewanella and Geobacter spp. is an intriguing physical property that is the fundamental basis for possible extracellular electron transport (EET) pathways. There is considerable debate regarding the origins of the electrical conductivity reported in these microbial cellular structures, which is essential for deciphering the EET mechanism.

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Two-dimensional semiconductors (2DSCs) such as molybdenum disulfide (MoS) have attracted intense interest as an alternative electronic material in the postsilicon era. However, the ON-current density achieved in 2DSC transistors to date is considerably lower than that of silicon devices, and it remains an open question whether 2DSC transistors can offer competitive performance. A high current device requires simultaneous minimization of the contact resistance and channel length, which is a nontrivial challenge for atomically thin 2DSCs, since the typical low contact resistance approaches for 2DSCs either degrade the electronic properties of the channel or are incompatible with the fabrication process for short channel devices.

High-Performance Organic Vertical Thin Film Transistor Using Graphene as a Tunable Contact.

Here we present a general strategy for the fabrication of high-performance organic vertical thin film transistors (OVTFTs) based on the heterostructure of graphene and different organic semiconductor thin films. Utilizing the unique tunable work function of graphene, we show that the vertical carrier transport across the graphene-organic semiconductor junction can be effectively modulated to achieve an ON/OFF ratio greater than 10(3). Importantly, with the OVTFT design, the channel length is determined by the organic thin film thickness rather than by lithographic resolution.

Holey Graphene as a Weed Barrier for Molecules.

We demonstrate the use of "holey" graphene as a mask against molecular adsorption. Prepared porous graphene is transferred onto a Au{111} substrate, annealed, and then exposed to dilute solutions of 1-adamantanethiol. In the pores of the graphene lattice, we find islands of organized, self-assembled molecules.

Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide.

The layered transition metal dichalcogenides have attracted considerable interest for their unique electronic and optical properties. While the monolayer MoS2 exhibits a direct bandgap, the multilayer MoS2 is an indirect bandgap semiconductor and generally optically inactive. Here we report electric-field-induced strong electroluminescence in multilayer MoS2.

Toward barrier free contact to molybdenum disulfide using graphene electrodes.

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) have attracted tremendous interest as a new class of electronic materials. However, there are considerable challenges in making reliable contacts to these atomically thin materials. Here we present a new strategy by using graphene as the back electrodes to achieve ohmic contact to MoS2.

Metal-organic framework templated synthesis of ultrathin, well-aligned metallic nanowires.

With well-defined porous structures and dimensions, metal-organic frameworks (MOFs) can function as versatile templates for the growth of metallic nanostructures with precisely controlled shapes and sizes. Using MOFs as templates, metallic nanostructures can be grown without the need of bulky surfactants and thus preserve their intrinsic surface. Additionally, the high surface area of MOFs can also ensure that the surface of the template metallic nanostructures is readily accessible, which is critical for the proper function of catalysts or sensors.

Large area growth and electrical properties of p-type WSe2 atomic layers.

Transition metal dichacogenides represent a unique class of two-dimensional layered materials that can be exfoliated into single or few atomic layers. Tungsten diselenide (WSe(2)) is one typical example with p-type semiconductor characteristics. Bulk WSe(2) has an indirect band gap (∼ 1.

Holey graphene frameworks for highly efficient capacitive energy storage.

Supercapacitors represent an important strategy for electrochemical energy storage, but are usually limited by relatively low energy density. Here we report a three-dimensional holey graphene framework with a hierarchical porous structure as a high-performance binder-free supercapacitor electrode. With large ion-accessible surface area, efficient electron and ion transport pathways as well as a high packing density, the holey graphene framework electrode can deliver a gravimetric capacitance of 298 F g(-1) and a volumetric capacitance of 212 F cm(-3) in organic electrolyte.

Graphene: an emerging electronic material.

Graphene, a single layer of carbon atoms in a honeycomb lattice, offers a number of fundamentally superior qualities that make it a promising material for a wide range of applications, particularly in electronic devices. Its unique form factor and exceptional physical properties have the potential to enable an entirely new generation of technologies beyond the limits of conventional materials. The extraordinarily high carrier mobility and saturation velocity can enable a fast switching speed for radio-frequency analog circuits.

Domain wall motion in synthetic Co2Si nanowires.

We report the synthesis of single crystalline Co(2)Si nanowires and the electrical transport studies of single Co(2)Si nanowire devices at low temperature. The butterfly shaped magnetoresistance shows interesting ferromagnetic features, including negative magnetoresistance, hysteretic switch fields, and stepwise drops in magnetoresistance. The nonsmooth stepwise magnetoresistance response is attributed to magnetic domain wall pinning and depinning motion in the Co(2)Si nanowires probably at crystal or morphology defects.