Dependence of RF Sputtering Power on Structural and Electrical Properties of SnO Thin Films.

SnO thin films were deposited on Si substrates by radio frequency (RF) magnetron sputtering technique, and the effects of different sputtering power (60-90 W) on the structural, surface morphological, and electrical properties of the film were investigated with XRD, Raman, AFM, SEM, and fore point probe. The deposited SnO film at lower RF was amorphous, while well-defined intense XRD signals at higher RF power indicated significant improvement in crystalline nature. E and A vibrating modes related to SnO were clearly observed in the Raman spectra.