Pulsed laser deposition of Zn(O,Se) layers in nitrogen background Pressure.

Zinc oxy-selenide Zn(O,Se) is a novel material, that can replace the toxic CdS buffer layer in thin film solar cells and other optoelectronic devices. In this paper a systematic study of the structural, optical and electrical properties of Zn(O,Se) layers, grown by pulsed laser deposition under 50 mTorr of nitrogen background pressure, over a wide range of the substrate temperature, from RT to 600 °C, is reported. XRD, Raman, HR-SEM, XPS, UV-Vis techniques and Hall effect measurements have been used to investigate the structural, and optoelectronic properties of Zn(O,Se) layers.