Independent Control Over Size and Surface Density of Droplet Epitaxial Nanostructures Using Ultra-Low Arsenic Fluxes.

Modern and future nanoelectronic and nanophotonic applications require precise control of the size, shape and density of III-V quantum dots in order to predefine the characteristics of devices based on them. In this paper, we propose a new approach to control the size of nanostructures formed by droplet epitaxy. We reveal that it is possible to reduce the droplet volume independently of the growth temperature and deposition amount by exposing droplets to ultra-low group-V flux.

Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces.

Semiconductor quantum dots (QDs) in the InAs/AlGaAs system are of great importance due to their promising optoelectronic and nanophotonic applications. However, control over emission wavelength governed by Al content in the matrix is still limited because of an influence of surface Al content on QD size and density. In this paper, we study the growth of In nanostructures by droplet epitaxy on various AlGaAs surfaces.