Scientific Wealth in Middle East and North Africa: Productivity, Indigeneity, and Specialty in 1981-2013.

Several developing countries seek to build knowledge-based economies by attempting to expand scientific research capabilities. Characterizing the state and direction of progress in this arena is challenging but important. Here, we employ three metrics: a classical metric of productivity (publications per person), an adapted metric which we denote as Revealed Scientific Advantage (developed from work used to compare publications in scientific fields among countries) to characterize disciplinary specialty, and a new metric, scientific indigeneity (defined as the ratio of publications with domestic corresponding authors) to characterize the locus of scientific activity that also serves as a partial proxy for local absorptive capacity.

Transistors formed from a single lithography step using information encoded in topography.

This paper describes a strategy for the fabrication of functional electronic components (transistors, capacitors, resistors, conductors, and logic gates but not, at present, inductors) that combines a single layer of lithography with angle-dependent physical vapor deposition; this approach is named topographically encoded microlithography (abbreviated as TEMIL). This strategy extends the simple concept of 'shadow evaporation' to reduce the number and complexity of the steps required to produce isolated devices and arrays of devices, and eliminates the need for registration (the sequential stacking of patterns with correct alignment) entirely. The defining advantage of this strategy is that it extracts information from the 3D topography of features in photoresist, and combines this information with the 3D information from the angle-dependent deposition (the angle and orientation used for deposition from a collimated source of material), to create 'shadowed' and 'illuminated' regions on the underlying substrate.

Growth of ZnO nanowires catalyzed by size-dependent melting of Au nanoparticles.

We present a general approach to growing ZnO nanowires on arbitrary, high melting point (above 970 degrees C) substrates using the vapor-liquid-solid (VLS) growth mechanism. Our approach utilizes the melting point reduction of sufficiently small (5 nm diameter) Au particles to provide a liquid catalyst without substrate interaction. Using this size-dependent melting effect, we demonstrate catalytic VLS growth of ZnO nanowires on both Ti and Mo foil substrates with aspect ratios in excess of 1000:1.

Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire.

We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H-InN single crystals growing in the [0001] orientation. The InN rods are uniform, showing very little variation in both diameter and length.

Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide.

Optical properties and valence band density of states near the Fermi level of high-quality VO(2) thin films have been investigated by mid-infrared reflectometry and hard-UV (hν = 150 eV) photoemission spectroscopy. An exceptionally large change in reflectance from 2 to 94% is found upon the thermally driven metal-insulator transition (MIT). The infrared dispersion spectra of the reflectance across the MIT are presented and evidence for the percolative nature of the MIT is pointed out.

Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.

We present a method which can be used for the mass-fabrication of nanowire photonic and electronic devices based on spin-on glass technology and on the photolithographic definition of independent electrical contacts to the top and the bottom of a nanowire. This method allows for the fabrication of nanowire devices in a reliable, fast, and low cost way, and it can be applied to nanowires with arbitrary cross section and doping type (p and n). We demonstrate this technique by fabricating single-nanowire p-Si(substrate)-n-ZnO(nanowire) heterojunction diodes, which show good rectification properties and, furthermore, which function as ultraviolet light-emitting diodes.

A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection.

We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polarity of the applied voltage, ultraviolet (and visible) light is generated in the GaN nanowire, while for the opposite polarity infrared light is emitted from the Si substrate.

Catalytic hydride vapour phase epitaxy growth of GaN nanowires.

Catalytic growth of GaN nanowires by hydride vapour phase epitaxy is demonstrated. Nickel-gold was used as a catalyst. Nanowire growth was limited to areas patterned with catalyst.

Spin polarized tunneling at finite bias.

A mesoscopic spin valve is used to determine the dynamic spin polarization of electrons tunneling out of and into ferromagnetic (FM) transition metals at finite voltages. The dynamic polarization of electrons tunneling out of the FM slowly decreases with increasing bias but drops faster and even inverts with voltage when electrons tunnel into it. A free-electron model shows that in the former case electrons originate near the Fermi level of the FM with large polarization whereas in the latter, electrons tunnel into hot electron states for which the polarization is significantly reduced.

Anisotropic metal-insulator transition in epitaxial thin films.

By comparing the properties of In and Pb quantum wells in a scanning tunneling microscopy subsurface imaging experiment, we found the existence of lateral bound states, a 2D Mott-Hubbard correlation gap, induced by transverse confinement. Its formation is attributed to spin or charge overscreening of quasi-2D excitations. The signature of the 2D confinement-deconfinement transition is also experimentally observed, with the correlation gap being pinned in the middle of the conduction band.

Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices.

We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle phase shift with respect to the hf=j variant Planck's over 2pi omega(c) condition for j>/=1, and they also suggest a small ( approximately 2%) reduction in the effective mass ratio, m(*)/m, with respect to the standard value for GaAs/AlGaAs devices.

Alternative paradigm for physical computing.

We identify a different class of physical systems that are able to form universal logic gates. By analogy with Si(100) surface dimers, we present a model to analyze the trajectories of the fixed points (interpreted as logic states) under variation of the basic parameters. Using the perspective of catastrophe theory, we show that information processing is the result of cycling the parameters of such systems through a path containing a cusp-type catastrophe.

Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures.

The observation of vanishing electrical resistance in condensed matter has led to the discovery of new phenomena such as, for example, superconductivity, where a zero-resistance state can be detected in a metal below a transition temperature T(c) (ref. 1). More recently, quantum Hall effects were discovered from investigations of zero-resistance states at low temperatures and high magnetic fields in two-dimensional electron systems (2DESs).

Imaging subsurface reflection phase with quantized electrons.

Lead quantum wells (QW) epitaxially grown on annealed Pb/Si(111) interface form a model system for the study of interactions between quantized electrons and adiabatically modulated boundaries. Tunnel spectra of this system reveal a previously unknown adiabatic shift of QW resonances due to lateral variations of the electronic reflection phase at the buried interface. With this effect, lateral distribution of the subsurface reflection phase can be probed, using scanning tunneling microscopy.

Confinement-enhanced electron transport across a metal-semiconductor interface.

We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well.

Artificially structured thin-film materials and interfaces.

The ability to artificially structure new materials on an atomic scale by using advanced crystal growth methods such as molecular beam epitaxy and metal-organic chemical vapor deposition has recently led to the observation of unexpected new physical phenomena and to the creation of entirely new classes of devices. In particular, the growth of materials of variable band gap in technologically important semiconductors such as GaAs, InP, and silicon will be reviewed. Recent results of studies of multilayered structures and interfaces based on the use of advanced characterization techniques such as high-resolution transmission electron microscopy and scanning tunneling microscopy will be presented.