Quantum materials (QMs) with strong correlation and nontrivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Here, we report that strain-induced symmetry modification in correlated oxide SrNbO thin films creates an emerging topological band structure.
View Article and Find Full Text PDFThe anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which it is originally absent by combining the effects of symmetry breaking, spin orbit interaction and proximity-induced magnetism.
View Article and Find Full Text PDFThe quantum anomalous Hall effect has been theoretically predicted and experimentally verified in magnetic topological insulators. In addition, the surface states of these materials exhibit a hedgehoglike "spin" texture in momentum space. Here, we apply the previously formulated low-energy model for BiSe, a parent compound for magnetic topological insulators, to a slab geometry in which an exchange field acts only within one of the surface layers.
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