Control of Hole Density in Russellite BiWO via Intentional Chemical Doping.

Based on the fundamental design concept of modulating the valence band maximum of oxides and subsequent predictions through computational approaches, several lone-pair -based p-type oxide semiconductors, such as Sn- or Bi-based complex oxides, have been developed. Thus far, the bandgap can be modified via tuning of the chemical composition, whereas the hole density cannot be intentionally controlled because of the poor chemical stability of Sn and/or the formation of oxygen vacancies. The inability to control hole density prohibits the design and realization of emergent electronic devices based on p- and n-type oxide semiconductors.

Bipolar Semiconducting Properties in α-SnWO Based on the Characteristic Defect Structure.

Diodes, memories, logic circuits, and most other current information technologies rely on the combined use of p- and n-type semiconductors. Although oxide semiconductors have many technologically attractive functionalities, such as transparency and high dopability to enable their use as conducting films, they typically lack bipolar conductivity. In particular, the absence of p-type semiconducting properties owing to the innate electronic structures of oxides represents a bottleneck for the development of practical devices.

Ultrasound-enhanced chemiluminescence tomography in biological tissue.

This paper reports ultrasound-assisted optical imaging of chemiluminescent probes in biological tissue. A focused low power ultrasound sonochemically enhances a peroxyoxalate chemiluminescence (CL) that involves indocyanine green (ICG) as luminescent pigments. By scanning the focus, it produces tomographic images of CL in scattering media.