Plasmon-induced Ag decorated CeO nanorod array for photodetector application.

In this work, glancing angle deposition (GLAD) has been used to grow Ag decorated CeO nanorod (NR) array on n-type Si substrate. The length of the NRs obtained was ∼235 nm and the size of the Ag NPs varied from 13 to 41 nm. The polycrystalline and crystalline nature of CeO and Ag respectively was revealed via selected area electron diffraction (SAED) analysis as well as x-ray diffraction (XRD) pattern.

Effect of Annealing on Morphology and Photoluminescence of WO₃ Nanowires Deposited by Glancing Angle Deposition Techniques.

In this article, vertically aligned WO₃ nanowires were synthesized by employing the glancing angle deposition technique. The significant improvement in the crystallinity and surface morphology of the synthesized WO₃ nanowires were observed for 500 °C annealed samples and beyond that temperature it starts degrading. The X-ray diffraction confirmed the different phase transition after annealing.

Effect of Ag Doping on the Glancing Angle Deposition Synthesized TiO₂ Nanowire for Enlarged Photodetection.

Glancing Angle Deposition (GLAD) technique was employed to synthesize Ag doped TiO2 nanowire on n-type Si-substrate. FEG-SEM confirms the perpendicular growth of Ag doped TiO2 nanowire with an average height and diameter of ~554 nm and ~40 nm respectively. The composition analysis by EDAX indicates the presence of Ti, O, Si and Ag elements.

High Internal Gain Axial SiOx-In2-xO3-y/Au Heterostructure Nanocolumnar Array Based Schottky Detector for Broad Band Recognition.

Glancing angle deposition (GLAD) was employed to fabricate the SiOx-In2-xO3-y axial heterostructure nanocolumn. The fabricated heterostructure nanocolumn was annealed at 550 °C for 1 hour at open air condition. The XRD analysis revealed the polycrystalline nature of the annealed SiOx-In2-xO3-y nanocolumn.