Controlled growth of boron-doped epitaxial graphene by thermal decomposition of a BC thin film.

We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of BC on SiC and graphene on BC had a fixed orientation relation, having a local stable structure with no dangling bonds. The first carbon layer on BC acts as a buffer layer, and the overlaying carbon layers are graphene.