Tunable triple plasmon-induced transparency in E-type graphene metamaterials.

Enhancing light-matter interaction is crucial for boosting the performance of nanophotonic devices, which can be achieved via plasmon-induced transparency (PIT). This study introduces what we believe to be a novel E-type metamaterial structure crafted from a single graphene layer. The structure, comprising a longitudinal graphene ribbon and three horizontal graphene strips, leverages destructive interference at terahertz frequencies to manifest triple plasmon-induced transparency (triple-PIT).

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE.

Free-standing GaN substrates are urgently needed to fabricate high-power GaN-based devices. In this study, 2-inch free-standing GaN substrates with a thickness of ~250 μm were successfully fabricated on double-polished sapphire substrates, by taking advantage of a combined buffer layer using hydride vapor phase epitaxy (HVPE) and the laser lift-off technique. Such combined buffer layer intentionally introduced a thin AlN layer, using a mix of physical and chemical vapor deposition at a relatively low temperature, a 3-dimensional GaN interlayer grown under excess ambient H, and a coalescent GaN layer.

A Novel Nanorod Self-Assembled WO₃ · H₂O Spherical Structure: Preparation and Flexible Gas Sensor.

In this work, a novel WO³ · H²O spherical structure which was self-assembled by nanorods was achieved by using hydrothermal method. A comprehensive growth mechanism was proposed to explain the formation of three different type nanostructures. Flexible gas sensors were successfully fabricated based on such unique nanostructures.

High-performance, all-solution-processed organic nanowire transistor arrays with inkjet-printing patterned electrodes.

Organic nanowire (NW) transistor arrays with a mobility of as high as 1.26 cm(2)·V(-1)·S(-1) are fabricated by combining the dip-coating process to align the NW into arrays with the inkjet printing process to pattern the source/drain electrodes. A narrow gap of ~20 μm has been obtained by modifying the inkjet process.

In situ growing and patterning of aligned organic nanowire arrays via dip coating.

Aligned organic nanowire arrays are grown in situ and patterned via dip coating. By optimizing the stick-slip motion, the solvent evaporation conditions, and the solution concentration, parallel organic nanowire arrays with tunable length and desirable density and periodicity are directly grown and aligned on the substrate. Organic FETs based on the organic nanowire array have been successfully fabricated with a mobility of 1 x 10(-4) cm(2) .