Change in Electrical/Mechanical Properties of Plasma Polymerized Low Dielectric Constant Films after Etching in CF/O Plasma for Semiconductor Multilevel Interconnects.

As semiconductor chips have been integrated to enhance their performance, a low-dielectric-constant material, SiCOH, with a relative dielectric constant ≤ 3.5 has been widely used as an intermetal dielectric (IMD) material in multilevel interconnects to reduce the resistance-capacitance delay. Plasma-polymerized tetrakis(trimethylsilyoxy)silane (ppTTMSS) films were created using capacitively coupled plasma-enhanced chemical vapor deposition with deposition plasma powers ranging from 20 to 60 W and then etched in CF/O plasma using reactive ion etching.

Inner surface modification of polyurethane ureteral stents using plasma-enhanced chemical vapor deposition to improve the resistance to encrustation in a pig model.

Purpose: We developed a ureteral stent with a non-fouling inner surface using plasma micro-surface modification technology. This study aimed to evaluate the safety and efficacy of this stent in animal model.

Materials And Methods: Ureteral stents were placed in five Yorkshire pigs.

Inner surface modification of ureteral stent polyurethane tubes based by plasma-enhanced chemical vapor deposition to reduce encrustation and biofilm formation.

Encrustation and/or biofilm formation in ureteral stents are major causes of obstruction and reduce the lifetime of a ureteral stent. In this study, the inner surfaces of polyurethane (PU) tubes (inner and outer diameters of 1.2 and 2.

Plasma Polymerized SiCOH Films from Octamethylcyclotetrasiloxane by Dual Radio Frequency Inductively Coupled Plasma Chemical Vapor Deposition System.

We have fabricated porous plasma polymerized SiCOH (ppSiCOH) films with low-dielectric constants (low-, less than 2.9), by applying dual radio frequency plasma in inductively coupled plasma chemical vapor deposition (ICP-CVD) system. We varied the power of the low radio frequency (LF) of 370 kHz from 0 to 65 W, while fixing the power of the radio frequency (RF) of 13.

Study on Effects of Carrier Gas Flow Rate on Properties of Low Dielectric Constant Film Deposited by Plasma Enhanced Chemical Vapor Deposition Using the Octamethylcyclotetrasiloxane Precursor.

In semiconductor industry, low-dielectric-constant SiCOH films are widely used as inter-metal dielectric (IMD) material to reduce a resistance-capacitance delay, which could degrade performances of semiconductor chips. Plasma enhanced chemical vapor deposition (PECVD) system has been employed to fabricate the low-dielectric-constant SiCOH films. In this work, among various parameters (plasma power, deposition pressure, substrate temperature, precursor injection flow rate, etc.