Highly efficient blue InGaN nanoscale light-emitting diodes.

Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-increasing demands for high-performance displays owing to their high efficiency, brightness and stability. However, μLEDs have a large problem in that the external quantum efficiency (EQE) decreases with the size reduction. Here we demonstrate a blue InGaN/GaN multiple quantum well (MQW) nanorod-LED (nLED) with high EQE.