Improved Electrical Performance of SiO₂-Doped Indium Zinc Oxide Thin-Film Transistor.

In this study, we investigated the effect of oxygen content on the stability and the role of silicon in amorphous SiO₂-doped indium-zinc-oxide thin film transistor. The SiO₂-doped IZO (SIZO) thinfilms were deposited at room temperature by radio-frequency magnetron co-sputtering. To optimize stability and electrical performance, we changed the amount of oxygen by changing oxygen gas ratio in reactive sputtering (11%, 12%, and 13%) and used SiO₂ target to deposit SIZO active layer.