Publications by authors named "Nae-Man Park"

The ability to image pressure distribution over complex three-dimensional surfaces would significantly augment the potential applications of electronic skin. However, existing methods show poor spatial and temporal fidelity due to their limited pixel density, low sensitivity, or low conformability. Here, we report an ultraflexible and transparent electroluminescent skin that autonomously displays super-resolution images of pressure distribution in real time.

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A simple process for extracting cellulose nanocrystals (CNCs) is proposed that only uses high-pressure homogenization (HPH) controlling a process temperature. The proposed process was assessed and compared with normal production through acidic hydrolysis. Temperature-controlled HPH produced CNCs with high crystallinity, which linearly increased with increasing process temperature over 20 passes.

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The growth of one-dimensional nanostructures without a metal catalyst via a simple solution method is of considerable interest due to its practical applications. In this study, the growth of amorphous silicon (-Si) nanotips was investigated using an aqueous solution dropped onto the Si substrate, followed by drying at room temperature or below for 24 h, resulting in the formation of -Si nanotips on the Si substrate. Typically, the -Si nanotips were up to 1.

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In recent years, smart light-emitting-type electronic devices for wearable applications have been required to have flexibility and miniaturization, which limits the use of conventional bulk batteries. Therefore, it is important to develop a self-powered light-emitting system. Our study demonstrates the potential of a new self-powered luminescent textile system that emits light driven by random motions.

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We demonstrate a new patterning technique for gallium-based liquid metals on flat substrates, which can provide both high pattern resolution (∼20 μm) and alignment precision as required for highly integrated circuits. In a very similar manner as in the patterning of solid metal films by photolithography and lift-off processes, the liquid metal layer painted over the whole substrate area can be selectively removed by dissolving the underlying photoresist layer, leaving behind robust liquid patterns as defined by the photolithography. This quick and simple method makes it possible to integrate fine-scale interconnects with preformed devices precisely, which is indispensable for realizing monolithically integrated stretchable circuits.

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In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.

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Index-matched indium tin oxide (ITO) electrodes for capacitive touch screen panels have been fabricated to improve optical transmittance and reduce the difference of reflectance (deltaR) between the etched and un-etched regions. 8.5 nm Nb2O5 and 49 nm SiO2 thin films were deposited by magnetron sputtering as index-matching layers between an ITO electrode and a glass substrate.

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Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure.

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A surface acoustic wave (SAW) device consisting of 1-6 microm-thick ZnO thin films deposited on Si wafer was designed, fabricated, and characterized in this study. Photolithographic protocols for interdigitated transducers (IDTs) and surface modification using fluoroalkylsilane are employed with the aim of droplet-based microfluidic actuations in bio-microsystems. A ZnO thin film was grown on a 4' silicon wafer with c-axis orientation, an average roughness of 11.

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