A NIGT1-centred transcriptional cascade regulates nitrate signalling and incorporates phosphorus starvation signals in Arabidopsis.

Nitrate is a nutrient signal that triggers complex regulation of transcriptional networks to modulate nutrient-dependent growth and development in plants. This includes time- and nitrate concentration-dependent regulation of nitrate-related gene expression. However, the underlying mechanisms remain poorly understood.

Difference in cesium accumulation among rice cultivars grown in the paddy field in Fukushima Prefecture in 2011 and 2012.

After the accident of the Fukushima 1 Nuclear Power Plant in March 2011, radioactive cesium was released and paddy fields in a wide area including Fukushima Prefecture were contaminated. To estimate the levels of radioactive Cs accumulation in rice produced in Fukushima, it is crucial to obtain the actual data of Cs accumulation levels in rice plants grown in the actual paddy field in Fukushima City. We herein conducted a two-year survey in 2011 and 2012 of radioactive and non-radioactive Cs accumulation in rice using a number of rice cultivars grown in the paddy field in Fukushima City.

A nitrate-inducible GARP family gene encodes an auto-repressible transcriptional repressor in rice.

Nitrogen is the most important macronutrient in plants and its supply induces responses in gene expression, metabolism and developmental processes. However, the molecular mechanisms underlying the nitrogen responses remain poorly understood. Here we show that the supply of nitrate but not ammonium immediately induces the expression of a transcriptional repressor gene in rice, designated NIGT1 (Nitrate-Inducible, GARP-type Transcriptional Repressor 1).

Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy.

An electron-beam-induced-current technique has been applied to scanning transmission electron microscopy to characterize GaN/AlGaN/n-Si heterostructures. The structure was formed by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer. Two samples with nominal intermediate layer thicknesses of 60 and 120 nm were studied.

Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure.

Electron holography was applied to determine the contact potential differences in an AlGaN/AlN/Si heterostructure formed by metallorganic vapor phase epitaxy. Since mean inner potentials are generally different for different materials, their values before and after forming the junction were evaluated first, then the contact potential difference was obtained by subtracting the difference of the mean inner potentials before forming the junction from the corresponding difference after forming the junction. The contact potential differences thus obtained were consistent with a reported asymmetric nonlinear behavior in the current-voltage characteristics measured for a similar heterojunction diode.