Enhanced non-classical electrostriction in strained tetragonal ceria.

Electrostriction is the upsurge of strain under an electric field in any dielectric material. Oxygen-defective metal oxides, such as acceptor-doped ceria, exhibit high electrostriction 10 mV values, which can be further enhanced via interface engineering at the nanoscale. This effect in ceria is "non-classical" as it arises from an intricate relation between defect-induced polarisation and local elastic distortion in the lattice.

On the effect of precession for magnetic differential phase contrast imaging.

The separation of diffraction effects from phase contrast is a major challenge for differential phase contrast (DPC) imaging in scanning transmission electron microscopy (STEM). The application of electron beam precession has previously been proven successful in homogenizing the direct beam and improving the imaging of both long-range electric and magnetic fields. However, magnetic STEM-DPC imaging performed in a low magnification (LM) STEM mode suffers from significant aberrations of the probe forming lens and the consequent impediment of small precession angles.

The fabrication of freestanding complex oxide membranes: Can we avoid using water?

Unlabelled: Recent advances in fabricating scalable two-dimensional or freestanding functional materials have shown promise for their use in modern silicon-based electronics and future technologies. A growing interest is in creating freestanding complex oxide membranes using new methods like epitaxial lift-off and mechanical exfoliation to enhance their quality and integrity. Despite these advances, it remains challenging to consistently produce high-quality freestanding oxide membranes on a large scale for practical use.

The Role of Interface Band Alignment in Epitaxial SrTiO/GaAs Heterojunctions.

Correlated oxides are known to have remarkable properties, with a range of electronic, magnetic, optoelectronic, and photonic functionalities. A key ingredient in realizing these properties into practical technology is the effective and scalable integration of oxides with conventional semiconductors. Unlocking the full spectrum of functionality requires atomically abrupt oxide-semiconductor interfaces and intimate knowledge of their potential landscape and charge transport.

Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability.

Magnetic field-induced changes in the electrical resistance of materials reveal insights into the fundamental properties governing their electronic and magnetic behavior. Various classes of magnetoresistance have been realized, including giant, colossal, and extraordinary magnetoresistance, each with distinct physical origins. In recent years, extreme magnetoresistance (XMR) has been observed in topological and non-topological materials displaying a non-saturating magnetoresistance reaching 10-10% in magnetic fields up to 60 T.