Ultra-short stripe microlasers fabricated with a focused ion beam etching technique.

Fabry-Perot (FP) lasers with a cavity length shorten down to 50 µm were investigated. One or two laser mirrors were formed by focused ion beam etching. InGaAs quantum dots of high density were used as the laser active region.

Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam.

We reveal a novel phenomenon observed after self-catalytic growth of GaAs nanowires (NWs) on Si(111) substrates treated with a Ga focused ion beam (FIB). Depending on the ion dose, NW arrays with various geometrical parameters can be obtained. A minor treatment of the substrate enables a slight increase in the surface density of NWs relative to an unmodified substrate area.

Effect of Si(111) Surface Modification by Ga Focused Ion Beam at 30 kV on GaAs Nanowire Growth.

This paper presents the results of experimental studies of the effect of Si(111) surface modification by Ga-focused ion beam (FIB) at 30 kV accelerating voltage on the features of the epitaxial GaAs nanowire (NW) growth processes. We experimentally established the regularities of the Ga ions' dose effect during surface modification on the structural characteristics of GaAs NW arrays. Depending on the Ga ion dose value, there is one of three modes on the surface for subsequent GaAs NW growth.

Independent Control Over Size and Surface Density of Droplet Epitaxial Nanostructures Using Ultra-Low Arsenic Fluxes.

Modern and future nanoelectronic and nanophotonic applications require precise control of the size, shape and density of III-V quantum dots in order to predefine the characteristics of devices based on them. In this paper, we propose a new approach to control the size of nanostructures formed by droplet epitaxy. We reveal that it is possible to reduce the droplet volume independently of the growth temperature and deposition amount by exposing droplets to ultra-low group-V flux.

Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces.

Semiconductor quantum dots (QDs) in the InAs/AlGaAs system are of great importance due to their promising optoelectronic and nanophotonic applications. However, control over emission wavelength governed by Al content in the matrix is still limited because of an influence of surface Al content on QD size and density. In this paper, we study the growth of In nanostructures by droplet epitaxy on various AlGaAs surfaces.