A Humid-Air-Operable, NO-Responsive Polymer Transistor Series Circuit with Improved Signal-to-Drift Ratio Based on Polymer Semiconductor Oxidation.

A subparts per million-sensitive nitrogen dioxide (NO) sensing circuit with improved humid air stability was realized incorporating UV-ozone treatment on a poly(bisdodecylquaterthiophene)/polystyrene blend film. The circuit consisted of a pair of organic field-effect transistors (OFETs) in series, one OFET with and one without this treatment. In contrast to most previous OFET sensors, the readout was obtained from the voltage at a point between the OFETs.