The Effect of Preoperative Behavioral Intervention on Pain, Anxiety, Opioid Use, and Function in Patients Undergoing Total Knee Arthroplasty: A Randomized Controlled Study.

Objective: To evaluate the efficacy of preoperative cognitive-behavioral psychoeducation (CBE) for improved pain, anxiety, opioid use, and postoperative function in total knee arthroplasty (TKA) patients.

Methods: A randomized controlled trial was conducted among 36 military health system beneficiaries attending preoperative education for TKA. The standard of care (SOC) group (n = 18) received information on home safety, rehabilitation, postoperative precautions, and pain management.

Anisotropic electrical resistance in mesoscopic LaAlO/SrTiO devices with individual domain walls.

The crystal structure of bulk SrTiO(STO) transitions from cubic to tetragonal at around 105 K. Recent local scanning probe measurements of LaAlO/SrTiO (LAO/STO) interfaces indicated the existence of spatially inhomogeneous electrical current paths and electrostatic potential associated with the structural domain formation in the tetragonal phase of STO. Here we report a study of temperature dependent electronic transport in combination with the polarized light microscopy of structural domains in mesoscopic LAO/STO devices.

Atomic-resolved depth profile of strain and cation intermixing around LaAlO3/SrTiO3 interfaces.

Novel behavior has been observed at the interface of LaAlO3/SrTiO3 heterostructures such as two dimensional metallic conductivity, magnetic scattering and superconductivity. However, both the origins and quantification of such behavior have been complicated due to an interplay of mechanical, chemical and electronic factors. Here chemical and strain profiles near the interface of LaAlO3/SrTiO3 heterostructures are correlated.

Intrinsic Electron Mobility Exceeding 10³ cm²/(V s) in Multilayer InSe FETs.

Graphene-like two-dimensional (2D) materials not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe, a III-VI semiconductor, not only is a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multilayer InSe FET devices.