A systematic investigation of the changes in structural and optical properties of a semi-insulating GaAs (001) wafer under high-energy electron irradiation is presented in this study. GaAs wafers were exposed to high-energy electron beams under different energies of 10, 15, and 20 MeV for absorbed doses ranging from 0-2.0 MGy.
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October 2019
The main focus of this study is to investigate the effect of gamma irradiation on the electrical properties of PVDF/BT nanocomposites. A 1.25 MeV gamma-ray was delivered to the composite films with different BaTiO3-volume fraction, ƒBT = 0-0.
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