A refined plan-view specimen preparation technique for high-quality electron microscopy studies of epitaxially grown atomically thin 2D layers.

The structural studies of two-dimensional (2D) van der Waals heterostructures and understanding of their relationship with the orientation of crystalline substrates using transmission electron microscopy (TEM) presents a challenge in developing an easy-to-use plan-view specimen preparation technique. In this report, we introduce a simple approach for high-quality plan-view specimen preparation utilizing a dual beam system comprising focused ion beam and scanning electron microscopy. To protect the atomically thin 2D heterostructure during the preparation process, we employ an epoxy layer.

Level set simulation of focused ion beam sputtering of a multilayer substrate.

The evolution of a multilayer sample surface during focused ion beam processing was simulated using the level set method and experimentally studied by milling a silicon dioxide layer covering a crystalline silicon substrate. The simulation took into account the redeposition of atoms simultaneously sputtered from both layers of the sample as well as the influence of backscattered ions on the milling process. Monte Carlo simulations were applied to produce tabulated data on the angular distributions of sputtered atoms and backscattered ions.

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111).

We study the cross-sectional shape of GaN nanowires (NWs) by transmission electron microscopy. The shape is examined at different heights of long NWs, as well as at the same height for NWs of different lengths. Two distinct trends in the evolution of the cross-sectional shape along the NW length are observed.

Anodic TiOnanotube arrays for photocatalytic COconversion: comparative photocatalysis and EPR study.

Titania (TiO) is a widely used semiconductor for the photocatalytic decomposition of organic impurities in air, water and the conversion of COinto hydrocarbon fuel precursors. TiOin the form of nanotubes arrays is the most attractive for practical use because of the morphological advantages providing more favorable diffusion of photocatalytic reaction products and a low recombination rate of photogenerated electrons and holes. We have carried out a comparative study of the photocatalytic activity of gas-phase conversion of COto hydrocarbon products and the defect properties of multi-walled and single-walled arrays of TiOnanotubes.

Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures.

Combining graphene and the insulating hexagonal boron nitride (h-BN) into two-dimensional heterostructures is promising for novel, atomically thin electronic nanodevices. A heteroepitaxial growth, in which these materials are grown on top of each other, will be crucial for their scalable device integration. However, during this so-called van der Waals epitaxy, not only the atomically thin substrate itself must be considered but also the influences from the supporting substrate below it.