Formation of donor and acceptor states of the divacancy-oxygen centre in p-type Cz-silicon.

The formation of the divacancy-oxygen centre (V(2)O) in p-type Czochralski-grown silicon has been investigated by means of deep level transient spectroscopy (DLTS). The donor state (+/0) of V(2)O is located at ~E(v) + 0.23 eV (E(v) denotes the valence band edge) and emerges during heat treatment above 200 °C at the expense of the divacancy centre (V(2)).