Skyrmion-mediated nonvolatile ternary memory.

Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that voltage-controlled magnetic anisotropy (VCMA) based writing is highly energy-efficient compared to other writing methods used in non-volatile nano-magnetic binary memory systems. In this study, we introduce a new, VCMA-based and skyrmion-mediated non-volatile ternary memory system using a perpendicular magnetic tunnel junction (p-MTJ) in the presence of room temperature thermal perturbation.

A spin wave driven skyrmion-based diode on a T-shaped nanotrack.

The propagation of spin waves is one of the promising ways to design nanoscale spintronic devices. The spin waves can interact with the magnetic skyrmion, a particle-like object that is topologically stabilized by Dzyaloshinskii-Moriya interaction (DMI) in thin film heterostructures. In this work, a spin wave-driven skyrmion-based diode is proposed by employing a T-shaped ferromagnetic nanotrack.

Skyrmion motion under temperature gradient and application in logic devices.

Under the presence of temperature gradient (TG) on a nanotrack, it is necessary to investigate the skyrmion dynamics in various magnetic systems under the combined effect of forces due to magnonic spin transfer torque(μSTT),thermal STT (τSTT), entropic difference(dS),as well as thermal induced dipolar field (DF). Hence, in this work, the dynamics of skyrmions in ferromagnets (FM), synthetic antiferromagnets (SAF), and antiferromagnets (AFM) have been studied under different TGs and damping constants (αG). It is observed thatαGplays a major role in deciding the direction of skyrmion motion either towards the hotter or colder side in different magnetic structures.

Antiferromagnetic skyrmion-based high speed diode.

Antiferromagnetic (AFM) skyrmions are favored over ferromagnetic (FM) skyrmions as they can be driven parallel to in-plane driving currents and eventually prevent the annihilation at the edges of nanotrack. In this study, an AFM skyrmion-based diode is proposed to realize the one-way skyrmion motion that is crucial for data processing in nanoelectronic and spintronic devices. The skyrmion transport is controlled by exploiting the staircase notch region in the middle of the nanotrack.

Antiferromagnetic skyrmion repulsion based artificial neuron device.

Magnetic skyrmions are potential candidates for neuromorphic computing due to their inherent topologically stable particle-like behavior, low driving current density, and nanoscale size. Antiferromagnetic skyrmions are favored as they can be driven parallel to in-plane electrical currents as opposed to ferromagnetic skyrmions which exhibit the skyrmion Hall effect and eventually cause their annihilation at the edge of nanotracks. In this paper, an antiferromagnetic skyrmion based artificial neuron device consisting of a magnetic anisotropy barrier on a nanotrack is proposed.