Publications by authors named "N B Doroshina"

The plasmonic sensors based on silver nanoparticles are limited in application due to their relatively fast degradation in the ambient atmosphere. The technology of ion-beam modification for the creation of monocrystalline silver nanoparticles (NPs) with stable plasmonic properties will expand the application of silver nanostructures. In the present study, highly-stable monocrystalline NPs were formed on the basis of a thin silver film by low-energy ion irradiation.

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Heterogeneous nanostructures composed of metastable tetragonal 1T-MoS and stable hexagonal 2H-MoS phases are highly promising for a wide range of applications, including catalysis and ion batteries, due to the high electrical conductivity and catalytic activity of the 1T phase. However, a controllable synthesis of stabilized 1T-MoS films over the wafer-scale area is challenging. In this work, a metal-organic chemical vapor deposition process allowing us to obtain ultrathin MoS films containing both 1T and 2H phases and control their ratio through rhenium doping was suggested.

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The development and production of thin-film coatings having very low friction is an urgent problem of materials science. One of the most promising solutions is the fabrication of special nanocomposites containing transition-metal dichalcogenides and various carbon-based nanophases. This study aims to explore the influence of graphite-like carbon (g-C) and Ni interface layers on the tribological properties of thin WS films.

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The possibility of controlled scalable nanostructuring of surfaces by the formation of the plasmonic nanoparticles is very important for the development of sensors, solar cells, etc. In this work, the formation of the ensembles of silver nanoparticles on silicon and glass substrates by the magnetron deposition technique and the subsequent low-energy Ar ion irradiation was studied. The possibility of controlling the sizes, shapes and aerial density of the nanoparticles by the variation of the deposition and irradiation parameters was systematically investigated.

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Article Synopsis
  • Atomically thin molybdenum disulfide (MoS) is a promising material for advanced thin-body FETs, making large-area synthesis methods essential.
  • Current synthesis via sulfurization of oxide or metallic films shows potential but leads to electronic quality issues compared to exfoliated samples.
  • This study successfully synthesized ≈2.2 nm MoS films with good properties, confirmed by various spectroscopy methods, and demonstrated decent FET performance, but further research is needed to improve electronic qualities.
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