Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor.

Zirconium based thin film have been deposited by atomic layer deposition (ALD) process using Zr and Si containing Zr precursor with ozone as oxidant. We have pursued a means to control composition by varying Zr and Si containing precursor by cycle frequency. The molar ratio of Si to Zr in the Zr based films was 0.