Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes.

We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed.

Liquid and back gate coupling effect: toward biosensing with lowest detection limit.

We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and back gate (the substrate) has been revealed and used for optimization of signal-to-noise ratio in subthreshold as well as above-threshold regimes. Increasing the sensitivity of Si NW FET sensors above the detection limit has been predicted and proven by direct experimental measurements.