Perovskite Light-Emitting Diode Display Based on MoS Backplane Thin-Film Transistors.

The uniform deposition of perovskite light-emitting diodes (PeLEDs) and their integration with backplane thin-film transistors (TFTs) remain challenging for large-area display applications. Herein, an active-matrix PeLED display fabricated via the heterogeneous integration of cesium lead bromide LEDs and molybdenum disulfide (MoS )-based TFTs is presented. The single-source evaporation method enables the deposition of highly uniform perovskite thin films over large areas.

CsPbBr and CsPbBr perovskite light-emitting diodes using a thermally evaporated host-dopant system.

This article shows the results of fabricating a device through vacuum deposition by synthesizing a perovskite thin film in the powder form. Light emitting diodes (LEDs) were fabricated using a single-source and host-dopant system of the perovskite produced in the powder form. Both CsPbBr and CsPbBr used in the host-dopant system were green, and the host was tris(8-quinolinolato) aluminum(III).