Study of the influence of gamma irradiation on internal friction in dislocation silicon.

The effect of radiation defects formed during gamma irradiation of single-crystal silicon on the internal friction in dislocations was studied. It was found that in dislocation silicon, after irradiation with gamma rays of a source of ionizing radiation Co, at first the internal friction (Q) increases to a maximum value and then Q gradually decreases to the initial values. It is shown that, as a result of gamma irradiation of silicon, the resulting change in Q is associated with the process of relaxation of vacancies with the formation of vacancy defect complexes near dislocation lines.