Suppressing optical crosstalk for GaN/InGaN based flip-chip micro light-emitting diodes by using an air-cavity patterned sapphire substrate as a light filter.

In this work, by using three-dimensional finite-difference time-domain (3D FDTD) method, the effect of conventional nano-patterned sapphire substrate (NPSS) on the optical crosstalk and the light extraction efficiency (LEE) for InGaN/GaN-based flip-chip micro light-emitting diodes (µ-LEDs) are systematically studied. We find that the conventional NPSS is not suitable for µ-LEDs. It is because the inclined mesa sidewall for µ-LEDs possesses a good scattering effect for µ-LEDs, but the introduced conventional NPSS causes part of the light be off escape cone between sapphire and air and become the guided light.

Artificially formed resistive ITO/p-GaN junction to suppress the current spreading and decrease the surface recombination for GaN-based micro-light emitting diodes.

Due to the increased surface-to-volume ratio, the surface recombination caused by sidewall defects is a key obstacle that limits the external quantum efficiency (EQE) for GaN-based micro-light-emitting diodes (µLEDs). In this work, we propose selectively removing the periphery p-GaN layer so that the an artificially formed resistive ITO/p-GaN junction can be formed at the mesa edge. Three types of LEDs with different device dimensions of 30 × 30 µm, 60 × 60 µm and 100 × 100 µm are investigated, respectively.

Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated cones.

It is known that light extraction efficiency (LEE) for AlGaN-based deep ultraviolet light-emitting didoes (DUV LEDs) can be enhanced by using truncated cone arrays with inclined sidewalls. In this work, the air-cavity-shaped inclined sidewall is applied and the p-GaN layer at the top of the truncated cone is laterally over-etched so that more light escape paths are generated for AlGaN-based DUV LEDs. The experimental results manifest that when compared with DUV LEDs only having the air-cavity-shaped inclined sidewall, the optical power for the DUV LEDs with laterally over-etched p-GaN at the top of the truncated cone is enhanced by 30% without sacrificing the forward bias.