Optimizing the optoelectronic properties of broadband FeS/Si photodetectors deposition temperature tuning in chemical bath deposition.

This study investigates the fabrication and characterization of n-FeS/p-Si heterojunction photodetectors using chemical bath deposition (CBD) at deposition temperatures ranging from 50 °C to 80 °C. The impact of temperature on the structural, morphological, and optical properties of FeS thin films was evaluated. X-ray diffraction (XRD) revealed polycrystalline cubic FeS with improved crystallinity as the deposition temperature increased.