Magneto Acoustic Spin Hall Oscillators.

This paper introduces a novel oscillator that combines the tunability of spin Hall-driven nano oscillators with the high quality factor (Q) of high overtone bulk acoustic wave resonators (HBAR), integrating both reference and tunable oscillators on the same chip with CMOS. In such magneto acoustic spin Hall (MASH) oscillators, voltage oscillations across the magnetic tunnel junction (MTJ) that arise from a spin-orbit torque (SOT) are shaped by the transmission response of the HBAR that acts as a multiple peak-bandpass filter and a delay element due to its large time constant, providing delayed feedback. The filtered voltage oscillations can be fed back to the MTJ via (a) strain, (b) current, or (c) magnetic field.