The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation.

A challenging approach, but one providing a key solution to material growth, remote epitaxy (RE)-a novel concept related to van der Waals epitaxy (vdWE)-requires the stability of a two-dimensional (2-D) material. However, when graphene, a representative 2-D material, is present on substrates that have a nitrogen atom, graphene loss occurs. Although this phenomenon has remained a hurdle for over a decade, restricting the advantages of applying graphene in the growth of III-nitride materials, few previous studies have been conducted.

Improving Ultraviolet Responses in CuZnSn(S,Se) Thin-Film Solar Cells Using Quantum Dot-Based Luminescent Down-Shifting Layer.

Quantum dot (QD)-based luminescent down-shifting (LDS) layers were deposited on CuZnSn(S,Se) (CZTSSe) solar cells via the drop-casting method. The LDS layers can easily widen the narrow absorption wavelength regions of single-junction solar cells and enable improvement of the short-circuit current. The optical properties of LDS layers deposited on glass and containing different QD contents were analyzed based on their transmittance, reflectance, and absorbance.