Integration of O-band quantum dot lasers with AlGaN/GaN waveguides.

We integrate edge-emitting etched-facet InAs/GaAs quantum dot (QD) lasers to an AlGaN/GaN-on-sapphire waveguide platform via micro-transfer printing. The lasers are placed into a trench etched into the sapphire substrate so as to transversely align the waveguides. The AlGaN/GaN waveguide structure is designed to allow for tolerant alignment of the active lasing mode to the passive waveguide mode.