Doped SbTe narrow-band-gap semiconductors have been attracting considerable attention for different electronic and thermoelectric applications. Trivalent samarium (Sm)- and indium (In)-doped SbTe microstructures have been synthesized by the economical solvothermal method. Powder X-ray diffraction (PXRD) was used to verify the synthesis of single-phase doped and undoped SbTe and doping of Sm and In within the crystal lattice of SbTe.
View Article and Find Full Text PDFRecent advances in the fabrication and classification of amorphous carbon (a-Carbon) thin films play an active part in the field of surface materials science. In this paper, a pulsed laser deposition (PLD) technique through controlling experimental parameters, including deposition time/temperature and laser energy/frequency, has been employed to examine the substrate effect of amorphous carbon thin film fabrication over SiO and glass substrates. In this paper, we have examined the structural and magnetoresistance (MR) properties of these thin films.
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